| PART |
Description |
Maker |
| ISL55014IEZ-T7 ISL55014 |
MMIC Silicon Bipolar Broadband Amplifier
|
INTERSIL[Intersil Corporation]
|
| ISL55015 ISL55015IEZ-T7 |
MMIC Silicon Bipolar Broadband Amplifier
|
Intersil Corporation
|
| ISL55011 |
MMIC Silicon Bipolar Broadband Amplifier 单片硅双极宽带放大器
|
Intersil, Corp.
|
| ISL55010 ISL55010IEZ-T7 |
MMIC Silicon Bipolar Broadband Amplifier
From old datasheet system
|
Intersil Corporation
|
| BFS17W BFS17W. |
RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
RF-Bipolar NPN Type Transistors with transition frequency from 1 to 6 GHz
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| NBB-312 NBB-312-E NBB-312-T1 NBB-X-K1 |
CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz 0 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Cascadable Broadband GaAs MMIC Amplifier DC to 12 GHz
|
http://
RF Micro Devices, Inc.
RFMD[RF Micro Devices]
|
| BFR92T |
RF-Bipolar - NPN Silicon RF transistor for broadband amplifiers and fast non-saturated switches
|
Infineon Technologies AG
|
| BFR183 |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers
|
INFINEON[Infineon Technologies AG]
|
| BFR949L3 |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers in TSLP-3
|
Infineon Technologies AG
|
| BFP182 |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| BFP183W |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| MSA-0886 MSA-0886-BLK MSA-0886-TR1 MSA0886 |
Cascadable Silicon Bipolar MMIC Amplifier
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
